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NTE581 series datasheets. Manufacturer: NTE.

NTE581General purpose silicon rectifier. Fast recovery. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 8A. in 2-pin -- package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE58126 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max average forward rectified current 6A. in 2-pin -- package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE58146 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 6A. in 2-pin -- package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE58156 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A. in 2-pin -- package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE58176 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max average forward rectified current 6A. in 2-pin -- package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5818Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5819Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5820Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5821Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5822Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5823Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5824Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 1000V. Non-repetitive peak reverse voltage 1100V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5825Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 1000V. Non-repetitive peak reverse voltage 1100V. in 2-pin DO4 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE5810Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5811Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5870Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5871Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5872Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5873Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5874Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5875Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5876Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5877Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5878Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5879Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5880Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5881Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5882Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5883Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5886Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5887Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5890Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
NTE5891Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65°C to 175°C.Datasheet*)
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