| NTE330 | Germanium PNP transistor. High power switch. in 3-pin TO36 package. Operational temperature range from -65°C to 95°C. | Datasheet*) |
| NTE3300 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3301 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3302 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3303 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE331 | Silicon complementary NPN transistor. Audio power amp, switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE332 | Silicon complementary PNP transistor. Audio power amp, switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3310 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3311 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3312 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3320 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3321 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3322 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE3323 | Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C. | Datasheet*) |
| NTE337 | Silicon NPN transistor. RF power amp, driver. in 4-pin T72H package. Operational temperature range from -65°C to 200°C. | Datasheet*) |
| NTE338F | Silicon NPN transistor. RF power amp, driver. in 4-pin W52K package. Operational temperature range from 0°C to 200°C. | Datasheet*) |
| NTE335 | Silicon NPN RF Power Transistor Designed for power amplifier | Datasheet*) |
| NTE336 | Silicon NPN RF Power Transistor Designed for power amplifier | Datasheet*) |
| NTE338 | Silicon NPN Transistor RF Power Amp, Driver | Datasheet*) |
| NTE33 | 160V Vcbo, 15A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE333 | 15A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE334 | 15A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE339 | 48V Vcbo, 7A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE341 | 36V Vcbo, 640mA Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE344 | 35V Vcbo, 7A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE347 | 36V Vcbo, 600mA Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE350F | 36V Vcbo, 2.5A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE357 | 65V Vcbo, 1A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE359 | 65V Vcbo, 3A Ic Low frequency power silicon NPN transistor | Datasheet*) |
| NTE360 | 65V Vcbo, 5A Ic Low frequency power silicon NPN transistor | Datasheet*) |
