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NTE33 series datasheets. Manufacturer: NTE.

NTE330Germanium PNP transistor. High power switch. in 3-pin TO36 package. Operational temperature range from -65°C to 95°C.Datasheet*)
NTE3300Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3301Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3302Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3303Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE331Silicon complementary NPN transistor. Audio power amp, switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE332Silicon complementary PNP transistor. Audio power amp, switch. in 3-pin TO220 package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3310Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3311Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3312Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3320Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3321Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3322Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE3323Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch. in 3-pin -- package. Operational temperature range from 0°C to 150°C.Datasheet*)
NTE337Silicon NPN transistor. RF power amp, driver. in 4-pin T72H package. Operational temperature range from -65°C to 200°C.Datasheet*)
NTE338FSilicon NPN transistor. RF power amp, driver. in 4-pin W52K package. Operational temperature range from 0°C to 200°C.Datasheet*)
NTE335Silicon NPN RF Power Transistor Designed for power amplifierDatasheet*)
NTE336Silicon NPN RF Power Transistor Designed for power amplifierDatasheet*)
NTE338Silicon NPN Transistor RF Power Amp, DriverDatasheet*)
NTE33160V Vcbo, 15A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE33315A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE33415A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE33948V Vcbo, 7A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE34136V Vcbo, 640mA Ic Low frequency power silicon NPN transistorDatasheet*)
NTE34435V Vcbo, 7A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE34736V Vcbo, 600mA Ic Low frequency power silicon NPN transistorDatasheet*)
NTE350F36V Vcbo, 2.5A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE35765V Vcbo, 1A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE35965V Vcbo, 3A Ic Low frequency power silicon NPN transistorDatasheet*)
NTE36065V Vcbo, 5A Ic Low frequency power silicon NPN transistorDatasheet*)
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