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NTE27 series datasheets. Manufacturer: NTE.

NTE27Germanium PNP transistor. High current, high gain amp. in 2-pin TO3 package. Operational temperature range from -65°C to 110°C.Datasheet*)
NTE270Silicon complementary NPN transistor. Darlington power amp, switch. in 3-pin TO218 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE271Silicon complementary PNP transistor. Darlington power amp, switch. in 3-pin TO218 package. Operational temperature range from -65°C to 150°C.Datasheet*)
NTE2708Integrated circuit. NMOS, 8K UV EPROM, 450ns. in 24-pin DIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
NTE2716Integrated circuit. NMOS, 16K UV erasable PROM in 24-pin DIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
NTE272Silicon darlington complementary NPN power aplifier. in 3-pin TO202 package. Operational temperature range from -55°C to 150°C.Datasheet*)
NTE273Silicon darlington complementary PNP power aplifier. in 3-pin TO202 package. Operational temperature range from -55°C to 150°C.Datasheet*)
NTE2732AIntegrated circuit. 32K (4K x 8) NMOS UV erasable PROM. in 24-pin DIP package. Operational temperature range from 0°C to 70°C.Datasheet*)
NTE274Silicon complementary NPN transistor. Darlington power apmlifier, switch. in 2-pin TO66 package. Operational temperature range from -65°C to 200°C.Datasheet*)
NTE275Silicon complementary PNP transistor. Darlington power apmlifier, switch. in 2-pin TO66 package. Operational temperature range from -65°C to 200°C.Datasheet*)
NTE278Silicon NPN transistor. Broadband RF amp. in 3-pin TO39 package.Datasheet*)
NTE2764Integrated circuit. NMOS, 64K erasable EPROM, 200ns. in 28-pin DIP package. Operational temperature range from -10°C to 80°C.Datasheet*)
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