| NTE27 | Germanium PNP transistor. High current, high gain amp. in 2-pin TO3 package. Operational temperature range from -65°C to 110°C. | Datasheet*) |
| NTE270 | Silicon complementary NPN transistor. Darlington power amp, switch. in 3-pin TO218 package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
| NTE271 | Silicon complementary PNP transistor. Darlington power amp, switch. in 3-pin TO218 package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
| NTE2708 | Integrated circuit. NMOS, 8K UV EPROM, 450ns. in 24-pin DIP package. Operational temperature range from 0°C to 70°C. | Datasheet*) |
| NTE2716 | Integrated circuit. NMOS, 16K UV erasable PROM in 24-pin DIP package. Operational temperature range from 0°C to 70°C. | Datasheet*) |
| NTE272 | Silicon darlington complementary NPN power aplifier. in 3-pin TO202 package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
| NTE273 | Silicon darlington complementary PNP power aplifier. in 3-pin TO202 package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
| NTE2732A | Integrated circuit. 32K (4K x 8) NMOS UV erasable PROM. in 24-pin DIP package. Operational temperature range from 0°C to 70°C. | Datasheet*) |
| NTE274 | Silicon complementary NPN transistor. Darlington power apmlifier, switch. in 2-pin TO66 package. Operational temperature range from -65°C to 200°C. | Datasheet*) |
| NTE275 | Silicon complementary PNP transistor. Darlington power apmlifier, switch. in 2-pin TO66 package. Operational temperature range from -65°C to 200°C. | Datasheet*) |
| NTE278 | Silicon NPN transistor. Broadband RF amp. in 3-pin TO39 package. | Datasheet*) |
| NTE2764 | Integrated circuit. NMOS, 64K erasable EPROM, 200ns. in 28-pin DIP package. Operational temperature range from -10°C to 80°C. | Datasheet*) |
