MTE50N45 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin Case 346-01 package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE50N45 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin MO-040AA package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE50N50 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin Case 346-01 package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE50N50 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin MO-040AA package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE60N35 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin Case 346-01 package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE60N35 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin MO-040AA package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE60N40 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin Case 346-01 package. Operational temperature range from -65°C to 150°C. | Datasheet*) |
MTE60N40 | Power field effect transistor. N-channel enhancement mode silicon gate TMOS. in 3-pin MO-040AA package. Operational temperature range from -65°C to 150°C. | Datasheet*) |