IRG4PH50 series datasheets. Manufacturer: International Rectifier.

IRG4PH50KD Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A in 3-pin TO-247AC package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4PH50K Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A in 3-pin TO-247AC package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4PH50S Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A in 3-pin TO-247AC package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4PH50U Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A in 3-pin TO-247AC package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4PH50UD Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A in 3-pin TO-247AC package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4PH50 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) Datasheet*)

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