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IRG4BC30 series datasheets. Manufacturer: International Rectifier.

IRG4BC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30S-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC30FINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)Datasheet*)
IRG4BC30KD-STRRINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)Datasheet*)
IRG4BC30KDSINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)Datasheet*)
IRG4BC30KSINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)Datasheet*)
IRG4BC30SSINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)Datasheet*)
IRG4BC30USINSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)Datasheet*)
IRG4BC30WSINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)Datasheet*)
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