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IRG4BC20 series datasheets. Manufacturer: International Rectifier.

IRG4BC20Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20FD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20MD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20MDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20UD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRG4BC20FINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)Datasheet*)
IRG4BC20FD-STRLINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)Datasheet*)
IRG4BC20KSINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)Datasheet*)
IRG4BC20MDSINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)Datasheet*)
IRG4BC20SDSINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)Datasheet*)
IRG4BC20UDSINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)Datasheet*)
IRG4BC20WSINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)Datasheet*)
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