IRG4BC10 series datasheets. Manufacturer: International Rectifier.

IRG4BC10K Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4BC10KD Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4BC10S Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4BC10SD-L Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A in 3-pin TO-262 package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4BC10SD-S Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A in 3-pin DDPak package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4BC10SD Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRG4BC10UD Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*)

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