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IRC series datasheets. Manufacturer: International Rectifier.

IRC530HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. in 5-pin TO-220 package. Operational temperature range from -55°C to 175°C.Datasheet*)
IRC540HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 175°C.Datasheet*)
IRC630HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC634HEXFET power MOSFET. Continuous drain current 8.1A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.45 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC640HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC644HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC730HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC740HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC830HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRC840HEXFET power MOSFET. Continuous drain current 8.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 0.85 Ohm in 5-pin TO-220 package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRCZ24HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.040 Ohm, ID = 26A. in 5-pin TO-220 package. Operational temperature range from -55°C to 175°C.Datasheet*)
IRCZ34HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.050 Ohm, ID = 30A. in 5-pin TO-220 package. Operational temperature range from -55°C to 175°C.Datasheet*)
IRCZ44HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 50A. in 5-pin TO-220 package. Operational temperature range from -55°C to 175°C.Datasheet*)
IRCPower MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)Datasheet*)
IRC503Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)Datasheet*)
IRCP054HEXFET POWER MOSFETDatasheet*)
IRCI210-10100V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI210-1001.0kV V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI210-1201.2kV V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI210-20200V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI210-40400V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI210-60600V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI210-80800V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-10100V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-1001.0kV V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-1201.2kV V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-20200V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-40400V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-60600V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI230-80800V V[drm] Max., 40A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-10100V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-1001.0kV V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-1201.2kV V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-20200V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-40400V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-60600V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI350-80800V V[drm] Max., 110A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-10100V V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-1001.0kV V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-1201.2kV V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-20200V V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-40400V V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-60600V V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
IRCI480-80800V V[drm] Max., 140A I[T] Max. Silicon Controlled RectifierDatasheet*)
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