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RFM6N45 series datasheets. Manufacturer: GESS.
RFM6N45 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V, in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
RFM6N50 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V, in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
RFP6N45 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
RFP6N50 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check RFM6N45 (Intersil Corp.)
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