RFM4N35 series datasheets. Manufacturer: GESS.

RFM4N35 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V, in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM4N40 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V, in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP4N35 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP4N40 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFM4N35 (Intersil Corp.)

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