RFM25N05 series datasheets. Manufacturer: GESS.

RFM25N05 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Drain current RMS continuous 25A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM25N06 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Drain current RMS continuous 25A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP25N05 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Drain current RMS continuous 25A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP25N06 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Drain current RMS continuous 25A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*)

Click here to download Datasheet*)

^*) Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.