RFM18N08 series datasheets. Manufacturer: GESS.

RFM18N08 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 18A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM18N10 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 18A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP18N08 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 18A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP18N10 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 18A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFM18N08 (Intersil Corp.)

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