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RFM15N05 series datasheets. Manufacturer: GESS.

RFM15N05N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Drain current RMS continuous 15A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM15N06N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Drain current RMS continuous 15A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP15N05N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Drain current RMS continuous 15A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP15N06N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Drain current RMS continuous 15A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM15N05LN-channel logic level power field-effect transistor (LL FET). 50V, 15A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM15N06LN-channel logic level power field-effect transistor (LL FET). 60V, 15A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP15N05LN-channel logic level power field-effect transistor (LL FET). 50V, 15A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP15N06LN-channel logic level power field-effect transistor (LL FET). 60V, 15A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
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