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RFM12P08 series datasheets. Manufacturer: GESS.

RFM12P08P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -80V. Drain current Rms continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM12P10P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP12P08P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -80V. Drain current Rms continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP12P10P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
RFM12P08 (General Semiconductor)
Click here to download RFM12P08 Datasheet
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