RFM12P08 series datasheets. Manufacturer: GESS.

RFM12P08 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -80V. Drain current Rms continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM12P10 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12P08 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -80V. Drain current Rms continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12P10 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFM12P08 (General Semiconductor)

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