RFM12N18 series datasheets. Manufacturer: GESS.

RFM12N18 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 180V. Drain current RMS continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM12N20 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12N18 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 180V. Drain current RMS continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12N20 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFM12N18 (Intersil Corp.)

Click here to download Datasheet*)

^*) Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.