RFM12N08 series datasheets. Manufacturer: GESS.

RFM12N08 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM12N10 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12N08 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12N10 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM12N08L N-channel logic level power field-effect transistor (LL FET). 80V, 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM12N10L N-channel logic level power field-effect transistor (LL FET). 100V, 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12N08L N-channel logic level power field-effect transistor (LL FET). 80V, 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP12N10L N-channel logic level power field-effect transistor (LL FET). 100V, 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFM12N08 (Intersil Corp.)

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