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RFM12N08 series datasheets. Manufacturer: GESS.

RFM12N08N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM12N10N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP12N08N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP12N10N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM12N08LN-channel logic level power field-effect transistor (LL FET). 80V, 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFM12N10LN-channel logic level power field-effect transistor (LL FET). 100V, 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP12N08LN-channel logic level power field-effect transistor (LL FET). 80V, 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP12N10LN-channel logic level power field-effect transistor (LL FET). 100V, 12A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
RFM12N08 (Intersil Corp.)
Click here to download RFM12N08 Datasheet
Click here to download Datasheet
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