RFM10P12 series datasheets. Manufacturer: GESS.

RFM10P12 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -120V. Drain current Rms continuous 10A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM10P15 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -150V. Drain current Rms continuous 10A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP10P12 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -120V. Drain current Rms continuous 10A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP10P15 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -150V. Drain current Rms continuous 10A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*)

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