RFM10N12 series datasheets. Manufacturer: GESS.

RFM10N12 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 10A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM10N15 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP10N12 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 10A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP10N15 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM10N12L N-channel logic level power field-effect transistor (LL FET). 120V, 10A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFM10N15L N-channel logic level power field-effect transistor (LL FET). 150V, 10A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP10N12L N-channel logic level power field-effect transistor (LL FET). 120V, 10A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP10N15L N-channel logic level power field-effect transistor (LL FET). 150V, 10A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFM10N12 (Intersil Corp.)

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