RFL4N12 series datasheets. Manufacturer: GESS.

RFL4N12 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V, in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C. Datasheet*) RFL4N15 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V, in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFL4N12 (Intersil Corp.)

Click here to download Datasheet*)

^*) Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.