RFL1P08 series datasheets. Manufacturer: GESS.

RFL1P08 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -80V. Drain current Rms continuous 1A. in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C. Datasheet*) RFL1P10 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 1A. in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP2P08 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -80V. Drain current Rms continuous 2A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFP2P10 P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 2A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFL1P08 (Intersil Corp.)

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