RFL1N35 series datasheets. Manufacturer: GESS.

RFL1N35 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) RFL1N40 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*)

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