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RFL1N12 series datasheets. Manufacturer: GESS.

RFL1N12N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V, in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFL1N15N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V, in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP2N12N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP2N15N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V, in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFL1N12LN-channel logic level power field-effect transistor (LL FET). 120V, 1A. in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFL1N15LN-channel logic level power field-effect transistor (LL FET). 150V, 1A. in 3-pin TO-205AF package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP2N12LN-channel logic level power field-effect transistor (LL FET). 120V, 2A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
RFP2N15LN-channel logic level power field-effect transistor (LL FET). 150V, 2A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
RFL1N12 (Intersil Corp.)
Click here to download RFL1N12 Datasheet
Click here to download Datasheet
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