RFH35N08 series datasheets. Manufacturer: GESS.

RFH35N08 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 35A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*) RFH35N10 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 35A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*)

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