RFH30N12 series datasheets. Manufacturer: GESS.

RFH30N12 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 120V. Drain current RMS continuous 30A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*) RFH30N15 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 30A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*)

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