RFH25N18 series datasheets. Manufacturer: GESS.

RFH25N18 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 180V. Drain current RMS continuous 25A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*) RFH25N20 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 25A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*)

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