RFH12N35 series datasheets. Manufacturer: GESS.

RFH12N35 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Drain current RMS continuous 12A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*) RFH12N40 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Drain current RMS continuous 12A. in 3-pin TO-218AC package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check RFH12N35 (Intersil Corp.)

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