IRF830 series datasheets. Manufacturer: GESS.

IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF830 (Fairchild Semiconductor) IRF830 (Intersil Corp.) IRF830 (International Rectifier) IRF830 (Philips Semiconductors) IRF830 (SGS-Thomson Microelectronics) IRF830 (TEL) IRF830 (TRSYS) IRF830 (VAISH)

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