IRF820 series datasheets. Manufacturer: GESS.

IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF820 (Fairchild Semiconductor) IRF820 (Intersil Corp.) IRF820 (International Rectifier) IRF820 (Motorola) IRF820 (Samsung Electronic) IRF820 (SGS-Thomson Microelectronics)

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