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IRF730 series datasheets. Manufacturer: GESS.

IRF730N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF731N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF732N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF733N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
IRF730 (Fairchild Semiconductor)
IRF730 (Intersil Corp.)
IRF730 (International Rectifier)
IRF730 (Philips Semiconductors)
IRF730 (SGS-Thomson Microelectronics)
Click here to download IRF730 Datasheet
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