IRF610 series datasheets. Manufacturer: GESS.

IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF610 (Fairchild Semiconductor) IRF610 (Intersil Corp.)

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