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IRF610 series datasheets. Manufacturer: GESS.

IRF610N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF611N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF612N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF613N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
IRF610 (Fairchild Semiconductor)
IRF610 (Intersil Corp.)
Click here to download IRF610 Datasheet
Click here to download Datasheet
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