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IRF510 series datasheets. Manufacturer: GESS.
IRF510 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF511 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF512 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF513 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check IRF510 (Fairchild Semiconductor) IRF510 (Harris Semiconductor) IRF510 (Intersil Corp.) IRF510 (International Rectifier) IRF510 (SUTEX)
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