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IRF450 series datasheets. Manufacturer: GESS.
IRF450 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF451 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF452 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF453 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check IRF450 (Fairchild Semiconductor) IRF450 (Intersil Corp.) IRF450 (International Rectifier) IRF450 (Microsemi Corp.) IRF450 (Semelab Plc.) IRF450 (Samsung Electronic)
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