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IRF350 series datasheets. Manufacturer: GESS.
IRF350 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF351 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF352 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
IRF353 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. | Datasheet*) |
There are other manufacturers for this components. For more information please check IRF350 (Fairchild Semiconductor) IRF350 (Intersil Corp.) IRF350 (International Rectifier) IRF350 (Samsung Electronic)
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