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IRF330 series datasheets. Manufacturer: GESS.

IRF330N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF331N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF332N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF333N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
IRF330 (Fairchild Semiconductor)
IRF330 (Intersil Corp.)
IRF330 (International Rectifier)
IRF330 (Samsung Electronic)
Click here to download IRF330 Datasheet
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*)

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