IRF330 series datasheets. Manufacturer: GESS.

IRF330 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF331 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF332 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF333 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF330 (Fairchild Semiconductor) IRF330 (Intersil Corp.) IRF330 (International Rectifier) IRF330 (Samsung Electronic)

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