IRF320 series datasheets. Manufacturer: GESS.

IRF320 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF321 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF322 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF323 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF320 (Fairchild Semiconductor) IRF320 (Intersil Corp.) IRF320 (Samsung Electronic)

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