IRF250 series datasheets. Manufacturer: GESS.

IRF250 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF251 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF252 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF250 (Intersil Corp.) IRF250 (Semelab Plc.) IRF250 (Samsung Electronic)

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