IRF230 series datasheets. Manufacturer: GESS.

IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF230 (Fairchild Semiconductor) IRF230 (Intersil Corp.) IRF230 (Semelab Plc.) IRF230 (Samsung Electronic)

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