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IRF220 series datasheets. Manufacturer: GESS.

IRF220N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF221N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF222N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF223N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
IRF220 (Fairchild Semiconductor)
IRF220 (Intersil Corp.)
IRF220 (Samsung Electronic)
Click here to download IRF220 Datasheet
Click here to download Datasheet
*)

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