IRF150 series datasheets. Manufacturer: GESS.

IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF150 (Fairchild Semiconductor) IRF150 (Intersil Corp.) IRF150 (International Rectifier) IRF150 (IXYS) IRF150 (Semelab Plc.) IRF150 (Samsung Electronic)

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