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IRF130 series datasheets. Manufacturer: GESS.

IRF130N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF131N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF132N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
IRF133N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
IRF130 (Fairchild Semiconductor)
IRF130 (Intersil Corp.)
IRF130 (International Rectifier)
IRF130 (Semelab Plc.)
IRF130 (Samsung Electronic)
Click here to download IRF130 Datasheet
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