H11B1 series datasheets. Manufacturer: GESS.

H11B1 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. in 6-pin Dual-in-line package. Operational temperature range from -55°C to 100°C. Datasheet*) H11B1 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. in 6-pin Surface-mount packaging package. Operational temperature range from -55°C to 100°C. Datasheet*) H11B2 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. in 6-pin Dual-in-line package. Operational temperature range from -55°C to 100°C. Datasheet*) H11B2 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. in 6-pin Surface-mount packaging package. Operational temperature range from -55°C to 100°C. Datasheet*) H11B3 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. in 6-pin Surface-mount packaging package. Operational temperature range from -55°C to 100°C. Datasheet*) H11B3 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. in 6-pin Dual-in-line package. Operational temperature range from -55°C to 100°C. Datasheet*) There are other manufacturers for this components. For more information please check H11B1 (Fairchild Semiconductor) H11B1 (ISOCM) H11B1 (MCC) H11B1 (Motorola) H11B1 (QT)

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