BD795 series datasheets. Manufacturer: GESS.

BD795 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD796 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD797 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD798 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD799 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD800 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD801 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) BD802 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -100V, 65W. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check BD795 (Advanced Semiconductor, Inc) BD795 (Harris Semiconductor) BD795 (Intersil Corp.) BD795 (ISKRA) BD795 (Motorola) BD795 (National Semiconductor)

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