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BD533 series datasheets. Manufacturer: GESS.

BD533Epitaxial-base silicon N-P-N VERSAWATT transistor. 45V, 50W. in 3-pin TO-220AB package. Operational temperature range from -65°C to 150°C.Datasheet*)
BD534Epitaxial-base silicon P-N-P VERSAWATT transistor. -45V, 50W. in 3-pin TO-220AB package. Operational temperature range from -65°C to 150°C.Datasheet*)
BD535Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. in 3-pin TO-220AB package. Operational temperature range from -65°C to 150°C.Datasheet*)
BD536Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. in 3-pin TO-220AB package. Operational temperature range from -65°C to 150°C.Datasheet*)
BD537Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. in 3-pin TO-220AB package. Operational temperature range from -65°C to 150°C.Datasheet*)
BD538Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. in 3-pin TO-220AB package. Operational temperature range from -65°C to 150°C.Datasheet*)
BD533JLow frequency power silicon NPN transistorDatasheet*)
BD533KLow frequency power silicon NPN transistorDatasheet*)
BD535JLow frequency power silicon NPN transistorDatasheet*)
BD535KLow frequency power silicon NPN transistorDatasheet*)
There are other manufacturers for this components. For more information please check
BD533 (Advanced Semiconductor, Inc)
BD533 (Continental Device India Ltd)
BD533 (Fairchild Semiconductor)
BD533 (Harris Semiconductor)
BD533 (ISKRA)
BD533 (ME)
BD533 (Motorola)
BD533 (National Semiconductor)
BD533 (Semelab Plc.)
BD533 (SINC)
BD533 (Samsung Electronic)
BD533 (SGS-Thomson Microelectronics)
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*)

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