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2N6766 datasheet. Manufacturer: GESS.

2N6766N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. in 3-pin TO-204AE package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
2N6766 (Fairchild Semiconductor)
2N6766 (OMNI)
Click here to download 2N6766 Datasheet
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