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2N6761 series datasheets. Manufacturer: GESS.

2N6761N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
2N6762N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. in 3-pin TO-204AA package. Operational temperature range from -55°C to 150°C.Datasheet*)
There are other manufacturers for this components. For more information please check
2N6761 (Fairchild Semiconductor)
Click here to download 2N6761 Datasheet
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