2N6609 series datasheets. Manufacturer: GESS.

2N6609 Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. in 3-pin TO-204AA package. Operational temperature range from -65°C to 200°C. Datasheet*) MJ15004 Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. in 3-pin TO-204AA package. Operational temperature range from -65°C to 200°C. Datasheet*) RCA9116C Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. in 3-pin TO-204AA package. Operational temperature range from -65°C to 200°C. Datasheet*) RCA9116D Silicon P-N-P epitaxial-base high-power transistor. -120V, 200W. in 3-pin TO-204AA package. Operational temperature range from -65°C to 200°C. Datasheet*) RCA9116E Silicon P-N-P epitaxial-base high-power transistor. -100V, 200W. in 3-pin TO-204AA package. Operational temperature range from -65°C to 200°C. Datasheet*) There are other manufacturers for this components. For more information please check 2N6609 (BOCA) 2N6609 (MOSP) 2N6609 (ON Semiconductor)

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