NTE NTE589 Series Datasheets. NTE5890, NTE5886, NTE5811, NTE5874, NTE5881, NTE5872, NTE5892, NTE5897, NTE5904, NTE5899, NTE5879, NTE5903, NTE589, NTE5882, NTE5896, NTE5909, NTE5900, NTE5910, NTE5876, NTE5894, NTE5898, NTE5908, NTE5810, NTE5871, NTE5878, NTE5891, NTE5887, NTE5880, NTE5873, NTE5905, NTE5895, NTE5877, NTE5870, NTE5875, NTE5893, NTE5902, NTE5883, NTE5901, NTE5911 Datasheet.

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NTE589 series datasheets. Manufacturer: NTE.

NTE589	Silicon rectifier, general purpose, fast recovery. Max reccurent peak reverse voltage 400V. Max average forward rectified current 6.0A. in 2-pin -- package. Operational temperature range from -50^°C to 125^°C.	Datasheet^*)
NTE5810	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5811	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5870	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5871	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5872	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5873	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5874	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5875	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5876	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5877	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5878	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5879	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5880	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5881	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5882	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5883	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5886	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5887	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5890	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5891	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5892	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5893	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5894	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5895	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5896	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5897	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5898	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5899	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5900	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5901	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5902	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5903	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5904	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5905	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5908	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5909	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5910	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)
NTE5911	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. in 2-pin DO4 package. Operational temperature range from -65^°C to 175^°C.	Datasheet^*)

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