BD241 series datasheets. Manufacturer: ME.

BD241 4mW NPN silicon epitaxial base power transistor in 3-pin TO-220B package. Operational temperature range from -55°C to 150°C. Datasheet*) BD241A 4mW NPN silicon epitaxial base power transistor in 3-pin TO-220B package. Operational temperature range from -55°C to 150°C. Datasheet*) BD241B 4mW NPN silicon epitaxial base power transistor in 3-pin TO-220B package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check BD241 (Advanced Semiconductor, Inc) BD241 (BOCA) BD241 (Continental Device India Ltd) BD241 (Fairchild Semiconductor) BD241 (GESS) BD241 (Harris Semiconductor) BD241 (ISKRA) BD241 (MOSP) BD241 (Motorola) BD241 (National Semiconductor) BD241 (ON Semiconductor) BD241 (Philips Semiconductors) BD241 (Power Innovations) BD241 (Semelab Plc.) BD241 (SINC) BD241 (Samsung Electronic) BD241 (SGS-Thomson Microelectronics) BD241 (TEL) BD241 (TRSYS) BD241 (USHA)

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