IRF630 series datasheets. Manufacturer: GESS.

IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF632 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. in 3-pin TO-220AB package. Operational temperature range from -55°C to 150°C. Datasheet*) There are other manufacturers for this components. For more information please check IRF630 (Fairchild Semiconductor) IRF630 (Intersil Corp.) IRF630 (International Rectifier) IRF630 (Philips Semiconductors) IRF630 (SGS-Thomson Microelectronics)

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